BYC15-600 Datasheet, PDF (4/10 Pages) NXP Semiconductors – Rectifier diode, hyperfast

NXP Semiconductors
BYC15-600
Rectifier diode, hyperfast
6. Characteristics
Table 5. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Static characteristics
V_F
forward voltage
I_R
reverse current
Dynamic characteristics
I_F = 15 A; T_j = 150 °C; see Figure 2
I_F = 30 A; T_j = 150 °C; see Figure 2
I_F = 15 A; see Figure 2
V_R = 600 V
V_R = 500 V; T_j = 100 °C
-
1.32 2.03 V
-
1.64 2.34 V
-
1.89 2.9
V
-
12
200
µA
-
1.1
3.0
mA
t_rr
reverse recovery time I_F = 1 A to V_R = 30 V; dI_F/dt = 50 A/µs;
-
35
55
ns
see Figure 3
I_F = 15 A to V_R = 400 V; dI_F/dt = 500 A/µs;
see Figure 3
T_j = 25 °C
T_j = 100 °C
I_RM
peak reverse recovery I_F = 15 A to V_R = 400 V; T_j = 125 °C;
current
see Figure 3
-
19
-
ns
-
32
40
ns
dI_F/dt = 50 A/µs
-
3.0
7.5
A
dI_F/dt = 500 A/µs
-
9.5
12
A
V_FR
forward recovery
I_F = 15 A; dI_F/dt = 100 A/µs; see Figure 4
-
8
11
V
voltage
BYC15-600_1
Product data sheet
Rev. 01 — 29 November 2007
© NXP B.V. 2007. All rights reserved.
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