BUK7540-100A Datasheet, PDF (4/8 Pages) NXP Semiconductors – TrenchMOS transistor

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7540-100A
50 ^{Drain Current, ID (A)}
Tj = 25 C
45
VGS = 10V
8V
40
6V
35
30
25
5.4 V
20
15
10
5
0
0
5.2 V
5V
4.8 V
4.6 V
4.4 V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.1
5V
5.2 V 5.4 V
0.09 _{4.8 V}
0.08
Tj = 25 C
0.07
0.06
6V
0.05
0.04
8V
0.03
VGS = 10V
0.02
0.01
0
0 5 10 15 20 25 30 35 40 45 50
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D)
38
36
34
32
30
28
26
1
2
3
4
5
VGS/V
Fig.7. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(V_GS); conditions: I_D = 25 A;
Drain current, ID (A)
40
VDS > ID X RDS(ON)
35
30
Tj = 25 C
25
175 C
20
15
10
5
0
012345678
Gate-source voltage, VGS (V)
9 10
Fig.8. Typical transfer characteristics.
I_D = f(V_GS)
70
gfs/S
60
50
40
30
20
10
0
0
10 _ID/A 20
30
40
Fig.9. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
3a
Rds(on) normalised to 25degC
2.5
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.10. Normalised drain-source on-state resistance.
R /R _{DS(ON) DS(ON)25 ˚C} = f(T_j)
December 1999
4
Rev 1.000