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BUK72150-55A_11 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
102
ID
(A)
10
1
Limit RDSon = VDS / ID
DC
tp = 10 μ s
03np24
100 μ s
1 ms
10 ms
100 ms
10−1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 4
Min Typ Max Unit
-
-
4.1 K/W
-
71
-
K/W
10
Zth(j-mb)
(K/W) δ = 0.5
1
10−1
0.2
0.1
0.05
0.02
single shot
03np25
P
δ=
tp
T
10−2
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK72150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
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