BSR13 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN switching transistors

NXP Semiconductors
NPN switching transistors
Product data sheet
BSR13; BSR14
SYMBOL
PARAMETER
CONDITIONS
MIN.
h_FE
DC current gain
DC current gain
BSR13
BSR14
I_C = 0.1 mA; V_CE = 10 V; note 1 35
I_C = 1 mA; V_CE = 10 V; note 1
50
I_C = 10 mA; V_CE = 10 V; note 1 75
I_C = 150 mA; V_CE = 10 V; note 1 100
I_C = 150 mA; V_CE = 1 V; note 1 50
I_C = 500 mA; V_CE = 10 V; note 1
30
40
V_CEsat
collector-emitter saturation voltage I_C = 150 mA; I_B = 15 mA
BSR13
−
BSR14
−
collector-emitter saturation voltage I_C = 500 mA; I_B = 50 mA
BSR13
−
BSR14
−
V_BEsat
base-emitter saturation voltage
I_C = 150 mA; I_B = 15 mA
BSR13
−
BSR14
0.6
base-emitter saturation voltage
I_C = 500 mA; I_B = 50 mA
BSR13
−
BSR14
−
C_c
collector capacitance
I_E = I_e = 0; V_CB = 10 V; f = 1 MHz −
f_T
transition frequency
BSR13
I_C = 20 mA; V_CE = 20 V;
f = 100 MHz
250
BSR14
300
Switching times (between 10% and 90% levels); see Fig.2
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 150 mA; I_Bon = 15 mA;
−
I_Boff = −15 mA
−
−
−
−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
−
−
−
300
−
UNIT
−
−
400
mV
300
mV
1 .6
V
1
V
1 .3
V
1.2
V
2 .6
V
2
V
8
pF
−
MHz
−
MHz
35
ns
15
ns
20
ns
250
ns
200
ns
60
ns
2004 Jan 13
4