BLM6G10-30 Datasheet, PDF (4/11 Pages) NXP Semiconductors – W-CDMA 900 MHz - 1000 MHz power MMIC

NXP Semiconductors
BLM6G10-30; BLM6G10-30G
W-CDMA 900 MHz - 1000 MHz power MMIC
7. Characteristics
Table 6. Characteristics
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF;
3GPP test model 1; 1-64 PDPCH; f₁ = 922.5 MHz; f₂ = 932.5 MHz; f₃ = 947.5 MHz; f₄ = 957.5 MHz;
V_DS = 28 V; I_Dq1 = 105 mA; I_Dq2 = 288 mA; T_h = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
P_L(AV)
G_p
RL_in
η_D
IMD3
ACPR
average output power
power gain
P_L(AV) = 2 W
input return loss
P_L(AV) = 2 W
drain efficiency
P_L(AV) = 2 W
third-order intermodulation distortion P_L(AV) = 2 W
adjacent channel power ratio
P_L(AV) = 2 W
-
2
-
W
27
29 31
dB
12
15 -
dB
10
11.5 -
%
-
−48.5 −45 dBc
-
−52 −48.5 dBc
8. Application information
8.1 Ruggedness
The BLMG10-30 and BLM6G10-30G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V_DS = 32 V; I_Dq1 = 105 mA; I_Dq2 = 288 mA; P_L = 30 W (CW).
8.2 Impedance information
Table 7.
f
MHz
850
860
880
900
920
940
960
980
Typical impedance
Z_i[1]
Ω
43.6 − j0
43.5 − j0.25
43.4 − j0.4
43.4 − j0.6
43.5 − j0.9
43.6 − j1.3
43.6 − j1.7
43.6 − j2
[1] Device input impedance as measured from gate to ground.
[2] Test circuit impedance as measured from drain to ground.
Z_L[2]
Ω
3 − j0.8
3.2 − j0.7
3.4 − j0.5
3.5 − j0.2
3.45 − j0
3.2 − j0.1
3 − j0.1
2.7 − j0.1
BLM6G10-30_BLM6G10-30G_1
Objective data sheet
Rev. 01 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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