BGY66B_01 Datasheet, PDF (4/8 Pages) NXP Semiconductors – 120 MHz, 25 dB gain reverse amplifier

Philips Semiconductors
120 MHz, 25 dB gain reverse amplifier
Product specification
BGY66B
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
D
E
Z
p
SOT115J
A2
L
c
d
U2
Q
B
p
A
F
S
yM B
123
5
789
W
e
b
wM
e1
q2
yM B
q1
yM B
U1
q
0
5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A2
max.
b
c
DdE
max. max. max.
e
e1
F
L
min.
p
Q
max.
q
q1 q2
mm 20.8
9.1
0.51
0.38
0.25
27.2
2.54 13.75 2.54
5.08
12.7
8.8
4.15
3.85
2.4
38.1 25.4 10.2
S
U1
max.
U2
4.2 44.75 8
Ww
6-32 _0.25
UNC
y
Z
max.
0.1 3.8
OUTLINE
VERSION
IEC
SOT115J
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-02-06
2001 Oct 18
4