BFS19 Datasheet, PDF (4/7 Pages) NXP Semiconductors – NPN medium frequency transistor

NXP Semiconductors
NPN medium frequency transistor
Product data sheet
BFS19
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_BE
base-emitter voltage
C_c
collector capacitance
C_re
feedback capacitance
f_T
transition frequency
CONDITIONS
I_E = 0; V_CB = 20 V
I_E = 0; V_CB = 20 V; T_j = 100 °C
I_C = 0; V_EB = 5 V
I_C = 1 mA; V_CE = 10 V
I_C = 1 mA; V_CE = 10 V
I_E = 0; V_CB = 10 V; f = 1 MHz
I_C = 0 mA; V_CB = 10 V; f = 1 MHz
I_C = 1 mA; V_CE = 10 V; f = 100 MHz
VALUE
500
UNIT
K/W
MIN.
−
−
−
65
650
−
−
−
TYP.
−
−
−
−
−
1
0.85
260
MAX. UNIT
100 nA
10 µA
100 nA
225
740 mV
−
pF
−
pF
−
MHz
2004 Jan 05
4