BFQ540 Datasheet, PDF(4/8 Page) NXP Semiconductors

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BFQ540 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN wideband dual transistor

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NXP Semiconductors

NPN wideband transistor

Product speciï¬cation

BFQ540

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

V(BR)CBO

V(BR)CES

V(BR)EBO

ICBO

IEBO

hFE

Cre

s21 2

collector-base breakdown voltage open emitter; IC = 10 ÂµA; IE = 0 20

collector-emitter breakdown voltage RBE = 0; IC = 40 ÂµA

emitter-base breakdown voltage IE = 100 ÂµA; IC = 0

collector-base leakage current

VCB = 8 V; IE = 0

emitter-base leakage current

VCB = 1 V; IC = 0

DC current gain

IC = 40 mA; VCE = 8 V

100

transition frequency

IC = 40 mA; VCE = 8 V;

fm = 1 GHz

emitter capacitance

IC = ie = 0; VEB = 0.5 V; f = 1 MHz â

feedback capacitance

IC = 0; VCE = 8 V; f = 1 MHz

insertion power gain

IC = 40 mA; VCE = 8 V;

f = 900 MHz; Tamb = 25 Â°C

output voltage

note 1

note 2

second order intermodulation

note 3

distortion

noise ï¬gure

IC = 40 mA; VCE = 8 V;

f = 900 MHz; ÎS = Îopt

TYP.

120

0.9

500

350

1.9

MAX. UNIT

200 nA

250

GHz

â53 dB

2.4 dB

Notes

1. dim = â60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL = 50 â¦;

Vp = Vo; Vq = Vo â6 dB; Vr = Vo â6 dB;

fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz;

measured at fp + fq â fr = 793.25 MHz.

2. dim = â60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL = 50 â¦;

Vp = Vq = Vo; fp = 806 MHz; fq = 810 MHz;

measured at 2fp â fq = 802 MHz.

3. IC = 40 mA; VCE = 8 V; RL = 50 â¦;

Vp = Vq = 225 mV; fp = 250 MHz; fq = 560 MHz;

measured at fp + fq = 810 MHz.

Rev. 04 - 25 September 2007

4 of 8

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