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BCV28 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP Darlington transistors | |||
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NXP Semiconductors
PNP Darlington transistors
Product data sheet
BCV28; BCV48
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
IEBO
hFE
VCEsat
VBEsat
VBEon
fT
collector-base cut-off current
BCV28
BCV48
emitter-base cut-off current
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0 A; VCB = â30 V
IE = 0 A; VCB = â60 V
IC = 0 A; VBE = â10 V
IC = â1 mA; VCE = â5 V; see Fig.2
IC = â10 mA; VCE = â5 V; see Fig.2
IC = â100 mA; VCE = â5 V; see Fig.2
IC = â500 mA; VCE = â5 V; see Fig.2
IC = â100 mA; IB = â0.1 mA
â
â
â
â
â
â
4000 â
2000 â
10000 â
4000 â
20000 â
10000 â
4000 â
2000 â
â
â
â100 nA
â100 nA
â100 nA
â
â
â
â
â
â
â
â
â1 V
IC = â100 mA; IB = â0.1 mA
IC = â10 mA; IB = â5 mA
IC = â30 mA; VCE = â5 V;
f = 100 MHz
â
â
â1.5 V
â
â
â1.4 V
â
220 â
MHz
2004 Dec 06
4
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