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BC859 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859; BC860
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BC859B; BC860B
BC859C; BC860C
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
BC859B; BC860B;
BC859C; BC860C
noise figure
BC859B; BC860B;
BC859C; BC860C
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = â30 V
IE = 0; VCB = â30 V; Tj = 150 °C
IC = 0; VEB = â5 V
IC = â2 mA; VCE = â5 V;
see Figs 2 and 3
â
â1 â15 nA
â
â
â4 μA
â
â
â100 nA
220 â
475
420 â
800
IC = â10 mA; IB = â0.5 mA
â
IC = â100 mA; IB = â5 mA
â
IC = â10 mA; IB = â0.5 mA; note 1
â
IC = â100 mA; IB = â5 mA; note 1
â
IC = â2 mA; VCE = â5 V; note 2
â600
IC = â10 mA; VCE = â5 V; note 2
â
IE = Ie = 0; VCB = â10 V; f = 1 MHz â
IC = Ic = 0; VEB = â500 mV; f = 1 MHz â
IC = â10 mA; VCE = â5 V; f = 100 MHz 100
IC = â200 μA; VCE = â5 V; RS = 2 kΩ;
f = 30 Hz to 15 kHz
â
â75
â250
â700
â850
â650
â
4.5
10
â
â
â300
â650
â
â
â750
â820
â
â
â
4
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
IC = â200 μA; VCE = â5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
â
â
4
dB
Notes
1. VBEsat decreases by about â1.7 mV/K with increasing temperature.
2. VBE decreases by about â2 mV/K with increasing temperature.
2004 Jan 16
4
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