BC856 Datasheet, PDF (4/10 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector-base cut-off current
I_EBO
h_FE
V_CEsat
emitter-base cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B; BC858B
BC857C
collector-emitter saturation voltage
V_BEsat
base-emitter saturation voltage
V_BE
base-emitter voltage
C_c
collector capacitance
f_T
transition frequency
F
noise figure
Note
1. Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
MIN.
V_CB = −30 V; I_E = 0
−
V_CB = −30 V; I_E = 0;
−
T_j = 150 °C
V_EB = −5 V; I_C = 0
−
I_C = −2 mA; V_CE = −5 V
125
125
125
220
420
I_C = −10 mA; I_B = −0.5 mA −
I_C = −100 mA; I_B = −5 mA; −
note 1
I_C = −10 mA; I_B = −0.5 mA −
I_C = −100 mA; I_B = −5 mA; −
note 1
I_C = −2 mA; V_CE = −5 V
I_C = −10 mA; V_CE = −5 V
V_CB = −10 V; I_E = I_e = 0;
f = 1 MHz
−600
−
−
V_CE = −5 V; I_C = −10 mA; 100
f = 100 MHz
I_C = −200 μA; V_CE = −5 V; −
R_S = 2 kΩ; f = 1 kHz;
B = 200 Hz
TYP.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
−
2
MAX.
−15
−4
−100
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
10
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
2004 Jan 16
4