BC846S Datasheet, PDF (4/7 Pages) NXP Semiconductors – NPN general purpose double transistor

NXP Semiconductors
NPN general purpose double transistor
Product data sheet
BC846S
10³
handbook, halfpage
VCEsat
(mV)
10²
(1)
(2)
(3)
MGL738
10
10^−1
1
10
10²
10³
IC (mA)
I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.2 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
VBE
(mV)
1000
800
MGL739
(1)
(2)
600
(3)
400
200
10^−1
1
10
10²
10³
IC (mA)
V_CE = 5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
400
handbook, full pagewidth
hFE
(1)
300
200
(2)
(3)
100
MGL740
0
10^−1
V_CE = 5 V.
(1) T_amb = 150 °C.
1
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10²
10³
IC (mA)
Fig.4 DC current gain as a function of collector current; typical values.
1999 Sep 01
4