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BC618 Datasheet, PDF (4/7 Pages) Motorola, Inc – Darlington Transistors | |||
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NXP Semiconductors
NPN Darlington transistor
Product data sheet
BC618
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICES
IEBO
hFE
VCEsat
VBEsat
Cc
fT
collector-base cut-off current
VCB = 60 V; IE = 0 A
â
â
collector-emitter cut-off current
VBE = 0 V; VCE = 60 V
â
â
emitter-base cut-off current
VEB = 10 V; IC = 0 A
â
â
DC current gain
VCE = 5 V; see Fig.2
IC = 1 mA
2000 â
IC = 10 mA
4000 â
IC = 200 mA
10000 â
collector-emitter saturation voltage IC = 200 mA; IB = 0.2 mA
â
â
base-emitter saturation voltage IC = 200 mA; IB = 0.2 mA
â
â
collector capacitance
VCB = 30 V; IE = 0 A
â
3.5
transition frequency
VCE = 5 V; IC = 500 mA; f = 100 MHz 155 â
50 nA
50 μA
50 nA
â
â
70 000
1.1 V
1.6 V
â
pF
â
MHz
80000
handbook, full pagewidth
hFE
60000
MGD837
40000
20000
0
10â1
VCE = 2 V.
1
10
102
103
IC (mA)
Fig.2 DC current gain; typical values.
2004 Nov 05
4
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