BAT17 Datasheet, PDF (4/7 Pages) NXP Semiconductors – Schottky barrier diode

NXP Semiconductors
Schottky barrier diode
GRAPHICAL DATA
handbook¹, ⁰ha²lfpage
IF
(mA)
10
1
10^−1
MLC795
(1)
(2)
(3)
(4)
10^−2
0
200
(1) T_amb = 100 °C.
(2) T_amb = 60 °C.
400
600
800
VF (mV)
(3) T_amb = 25 °C.
(4) T_amb = −40 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Product data sheet
BAT17
10 ⁴
handbo_Io_Rk, halfpage
(nA)
10 ³
10 ²
10
1
MLC796
(1)
(2)
(3)
(4)
10 ¹
0
1
(1) T_amb = 100 °C.
(2) T_amb = 60 °C.
2
VR(V) ³
(3) T_amb = 25 °C.
(4) T_amb = −40 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
0.8
handbook, halfpage
Cd
(pF)
0.7
0.6
0.5
0.4
0
1
MLC797
2
3 _{VR (V)} 4
f = 1 MHz; T_amb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
4