Z0109MA0 Datasheet, PDF (3/13 Pages) NXP Semiconductors – Logic level four-quadrant triac

NXP Semiconductors
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DRM
I_T(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; T_lead ≤ 45 °C;
see Figure 1; see Figure 3; see Figure 2
I_TSM
I²t
dI_T/dt
I_GM
P_GM
P_G(AV)
T_stg
T_j
non-repetitive peak on-state
current
I²t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
full sine wave; T_j(init) = 25 °C;
t_p = 20 ms; see Figure 4; see Figure 5
full sine wave; T_j(init) = 25 °C;
t_p = 16.7 ms
t_p = 10 ms; sine-wave pulse
I_T = 1 A; I_G = 20 mA;
dI_G/dt = 100 mA/µs; T2+ G+
I_T = 1 A; I_G = 20 mA;
dI_G/dt = 100 mA/µs; T2+ G-
I_T = 1 A; I_G = 20 mA;
dI_G/dt = 100 mA/µs; T2- G-
I_T = 1 A; I_G = 20 mA;
dI_G/dt = 100 mA/µs; T2- G+
over any 20 ms period
1.2
I_{T(RMS )}
(A)
0.8
0.4
003aac264
16
I_T(RMS)
(A)
12
8
4
0
-50
0
50
100
150
T_{le a d} (°C )
0
10^-2
10^-1
Z0109MA0
4Q Triac
Min Max Unit
-
600 V
-
1
A
-
12.5 A
-
13.8 A
-
0.78 A²s
-
50 A/µs
-
50 A/µs
-
50 A/µs
-
20 A/µs
-
1
A
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
003a a f977
1
10
surge duration (s)
Fig 1. RMS on-state current as a function of lead
temperature; maximum values
Fig 2. RMS on-state current as a function of surge
duration; maximum values
Z0109MA0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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