PZTA92 Datasheet, PDF (3/6 Pages) NXP Semiconductors – PNP high-voltage transistor

Philips Semiconductors
PNP high-voltage transistor
Product specification
PZTA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
104
K/W
23
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
C_c
f_T
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
I_E = 0; V_CB = −200 V
I_C = 0; V_BE = −5 V
I_C = −1 mA; V_CE = −10 V; note 1
I_C = −10 mA; V_CE = −10 V; note 1
I_C = −30 mA; V_CE = −10 V; note 1
I_C = −20 mA; I_B = −2 mA
MIN.
−
−
25
40
25
−
I_C = −20 mA; I_B = −2 mA
−
I_E = 0; V_CB = −20 V; f = 1 MHz
−
I_C = −10 mA; V_CE = −20 V; f = 100 MHz 50
MAX.
−20
−100
−
−
−
−500
UNIT
nA
nA
mV
−900
6
−
mV
pF
MHz
1999 Apr 14
3