PZTA44 Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN high-voltage transistor

NXP Semiconductors
NPN high-voltage transistor
Product data sheet
PZTA44
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
91
K/W
10
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I_E = 0; V_CB = 400 V
I_E = 0; V_CB = 400 V; T_j = 150 °C
I_C = 0; V_EB = 4 V
V_CE = 10 V
I_C = 1 mA
I_C = 10 mA
I_C = 50 mA; note 1
I_C = 100 mA; note 1
I_C = 1 mA; I_B = 0.1 mA
I_C = 10 mA; I_B = 1 mA
I_C = 50 mA; I_B = 5 mA; note 1
I_C = 10 mA; I_B = 1 mA; note 1
I_E = i_e = 0; V_CB = 20 V; f = 1 MHz
I_C = i_c = 0; V_EB = 500 mV;
f = 1 MHz
I_C = 10 mA; V_CE = 10 V;
f = 100 MHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
−
MAX.
100
10
100
UNIT
nA
µA
nA
40
−
50
200
45
−
40
−
−
400
mV
−
500
mV
−
750
mV
−
850
mV
−
7
pF
−
180
pF
20
−
MHz
1999 May 21
3