PZTA42 Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN high-voltage transistor

NXP Semiconductors
NPN high-voltage transistor
Product data sheet
PZTA42
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
104
K/W
23
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
C_re
f_T
collector-emitter saturation
voltage
base-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
I_E = 0; V_CB = 200 V
I_C = 0; V_BE = 6 V
V_CE = 10 V
I_C = 1 mA
I_C = 10 mA
I_C = 30 mA
I_C = 20 mA; I_B = 2 mA
MIN.
−
−
25
40
40
−
I_C = 20 mA; I_B = 2 mA
−
I_C = i_c = 0; V_CB = 20 V; f = 1 MHz
−
I_C = 10 mA; V_CE = 20 V; f = 100 MHz 50
MAX.
20
100
UNIT
nA
nA
−
−
−
500
mV
900
mV
3
pF
−
MHz
1999 May 21
3