PZTA14 Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN Darlington transistor

NXP Semiconductors
NPN Darlington transistor
Product data sheet
PZTA14
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
100
K/W
19
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_CES
I_EBO
h_FE
V_CEsat
V_BEon
f_T
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I_E = 0; V_CB = 30 V
V_BE = 0; V_CE = 30 V
I_C = 0; V_EB = 10 V
V_CE = 5 V; (see Fig.2)
I_C = 10 mA
I_C = 100 mA
I_C = 100 mA; I_B = 0.1 mA
I_C = 100 mA; V_CE = 5 V
I_C = 10 mA; V_CE = 5 V; f = 100 MHz
−
−
−
10 000
20 000
−
−
125
MAX.
100
100
100
−
−
1.5
2
−
UNIT
nA
nA
nA
V
V
MHz
1999 Apr 14
3