PXTA42 Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN high-voltage transistor

NXP Semiconductors
NPN high-voltage transistor
Product data sheet
PXTA42
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
300
300
6
100
200
100
1.3
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_th(j-a)
R_th(j-s)
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector-base cut-off current
I_EBO
emitter-base cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
C_re
f_T
collector-emitter saturation voltage
base-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
I_E = 0 A; V_CB = 200 V
I_C = 0 A; V_BE = 6 V
I_C = 1 mA; V_CE = 10 V
I_C = 10 mA; V_CE = 10 V
I_C = 30 mA; V_CE = 10 V
I_C = 20 mA; I_B = 2 mA
I_C = 20 mA; I_B = 2 mA
I_C = i_c = 0 A; V_CB = 20 V;
f = 1 MHz
I_C = 10 mA; V_CE = 20 V;
f = 100 MHz
MIN.
−
−
25
40
40
−
−
−
MAX.
100
100
−
−
−
500
900
3
UNIT
nA
nA
mV
mV
pF
50
−
MHz
2004 Dec 09
3