PRTR5V0U6AS Datasheet, PDF (3/7 Pages) NXP Semiconductors – High speed interface ESD protection to IEC 61000-4-2 level 4

NXP Semiconductors
PRTR5V0U6AS
High speed interface ESD protection to IEC 61000-4-2 level 4
6. Characteristics
Table 5. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
C_(I/O-GND)
input/output to ground
capacitance
V_I = 0 V; f = 1 MHz; V_CC = 3 V
I_LR
reverse leakage current
V_I = 3 V
V_BR
breakdown voltage
Zener diode; I_I = 1 mA
C_sup
supply pin to ground capacitance V_I = 0 V; f = 1 MHz; V_CC = 3 V
V_F
forward voltage
[1] Measured from pin 1, 2, 4, 5, 6 and 8 to ground.
[2] Measured from pin 7 to ground.
Min Typ Max Unit
[1] _-
1.0 -
pF
[1] _-
[2] ₆
[2] _-
-
-
100 nA
-
9
V
30
-
pF
0.7 -
V
PRTR5V0U6AS_1
Product data sheet
Rev. 01 — 18 February 2008
© NXP B.V. 2008. All rights reserved.
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