PRTR5V0U4D Datasheet, PDF (3/7 Pages) NXP Semiconductors – Integrated quad ultra-low capacitance ESD protection

NXP Semiconductors
PRTR5V0U4D
Integrated quad ultra-low capacitance ESD protection
6. Characteristics
Table 5. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
C_(I/O-GND) input/output to ground
capacitance
I_LR
V_BR
C_sup
reverse leakage current
breakdown voltage
supply pin to ground
capacitance
V_F
forward voltage
Conditions
V_(I/O-GND) = 0 V;
V_CC = 3.0 V;
f = 1 MHz
V_R = 3.0 V
I_I = 1 mA
V_(I/O-GND) = 0 V;
V_CC = 3.0 V;
f = 1 MHz
[1] Measured from pins 1, 3, 4 and 6 to pin 2.
[2] Measured from pin 5 to pin 2.
Min Typ Max Unit
[1] _-
1.0 -
pF
[1] _-
6
[2] _-
-
100 nA
-
9
V
40 -
pF
-
0.7 -
V
7. Application information
The PRTR5V0U4D is optimized to protect e.g. two USB 2.0 ports against ESD. Each
device is capable to protect both USB data lines and the V_BUS supply.
A typical application is shown in Figure 1.
V_BUS
4
USB 2.0
IEEE1394
5
CONTROLLER
6
Fig 1. Typical application of PRTR5V0U4D
V_BUS
D+
D−
GND
3
2
1
V_BUS
D+
D−
GND
001aah387
PRTR5V0UD4_1
Product data sheet
Rev. 01 — 11 January 2008
© NXP B.V. 2008. All rights reserved.
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