PMXB40UNE Datasheet, PDF (3/15 Pages) NXP Semiconductors – 12 V, N-channel Trench MOSFET

NXP Semiconductors
PMXB40UNE
12 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C
[1]
V_GS = 4.5 V; T_amb = 100 °C
[1]
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
P_tot
total power dissipation
T_amb = 25 °C
[2]
[1]
T_sp = 25 °C
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Source-drain diode
I_S
source current
T_amb = 25 °C
[1]
Min Max Unit
-
12
V
-8
8
V
-
3.2 A
-
2.5 A
-
15
A
-
0.4 W
-
1.07 W
-
8.33 W
-55 150 °C
-55 150 °C
-65 150 °C
-
1
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
017aaa123
120
017aaa124
P_der
I_der
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
PMXB40UNE
Product data sheet
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27 September 2013
© NXP N.V. 2013. All rights reserved
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