PMST6428 Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN general purpose transistors

NXP Semiconductors
NPN general purpose transistors
Product data sheet
PMST6428; PMST6429
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
T_amb ≤ 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
PMST6428
DC current gain
PMST6429
V_CEsat
collector-emitter saturation
voltage
V_BE
base-emitter voltage
C_c
collector capacitance
C_e
emitter capacitance
f_T
transition frequency
Note
1. Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
I_E = 0; V_CB = 30 V
I_E = 0; V_CB = 30 V; T_j = 150 °C
I_C = 0; V_EB = 5 V
V_CE = 5 V
I_C = 0.01 mA
I_C = 0.1 mA
I_C = 1 mA
I_C = 10 mA
V_CE = 5 V
I_C = 0.01 mA
I_C = 0.1 mA
I_C = 1 mA
I_C = 10 mA
I_C = 10 mA; I_B = 0.5 mA; note 1
I_C = 100 mA; I_B = 5 mA; note 1
I_C = 1 mA; V_CE = 5 V
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_C = 1 mA; V_CE = 5 V; f = 100 MHz
MIN.
−
−
−
250
250
250
250
500
500
500
500
−
−
560
−
−
100
MAX.
10
10
10
UNIT
nA
μA
nA
−
650
−
−
−
1 250
−
−
200
600
660
3
12
700
mV
mV
mV
pF
pF
MHz
1999 Apr 22
3