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PMEG2015EH_10 Datasheet, PDF (3/9 Pages) NXP Semiconductors – 20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tstg
storage temperature
−65
Max
Unit
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG2015EH
Conditions
in free air
PMEG2015EJ
Rth(j-sp)
thermal resistance from
junction to solder point
PMEG2015EH
PMEG2015EJ
Min Typ Max Unit
[1][2] -
-
330 K/W
[2][3] -
-
150 K/W
[1][2] -
-
350 K/W
[2][3] -
-
150 K/W
-
-
60 K/W
-
-
55 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating are available on request.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
7. Characteristics
PMEG2015EH_EJ_3
Product data sheet
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage IF = 10 mA
IF = 100 mA
IF = 500 mA
IF = 1 A
IF = 1.5 A
IR
reverse current VR = 5 V
VR = 8 V
VR = 10 V
VR = 15 V
VR = 20 V
Cd
diode capacitance VR = 1 V; f = 1 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min
[1] -
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
Rev. 03 — 15 January 2010
Typ
Max Unit
240
270
mV
300
350
mV
400
460
mV
480
550
mV
560
660
mV
5
10
μA
7
20
μA
8
30
μA
10
50
μA
15
70
μA
40
50
pF
© NXP B.V. 2010. All rights reserved.
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