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PMEG2005AEA Datasheet, PDF (3/10 Pages) NXP Semiconductors – Very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors
Very low VF MEGA
Schottky barrier rectifiers
Product data sheet
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
PMEG2005AEA
PMEG3005AEA
PMEG4005AEA
IF
IFRM
IFSM
Tj
Tamb
Tstg
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
operating ambient temperature
storage temperature
CONDITIONS
note 1
tp ≤ 1 ms; δ ≤ 0.5
tp = 8 ms; square wave
note 2
note 2
MIN.
MAX.
UNIT
−
20
V
−
30
V
−
40
V
−
0.5
A
−
3.5
A
−
10
A
−
150
°C
−65
+150
°C
−65
+150
°C
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
VALUE
450
210
90
UNIT
K/W
K/W
K/W
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
2003 Aug 20
3