PMDPB55XP Datasheet, PDF (3/15 Pages) NXP Semiconductors – 20 V, dual P-channel Trench MOSFET

NXP Semiconductors
PMDPB55XP
20 V, dual P-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
V_GS = -4.5 V; T_amb = 25 °C
[1]
V_GS = -4.5 V; T_amb = 100 °C
[1]
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
P_tot
total power dissipation
T_amb = 25 °C
[2]
[1]
T_sp = 25 °C
Source-drain diode
I_S
source current
T_amb = 25 °C
[1]
Per device
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Min Max Unit
-
-20 V
-12 12 V
-
-4.5 A
-
-3.4 A
-
-2.2 A
-
-14 A
-
490 mW
-
1170 mW
-
8300 mW
-
-1.2 A
-55 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
120
P_der
(%)
80
017aaa123
120
I_der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
175
T_j (°C)
0
−75
−25
25
75
125
175
T_j (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMDPB55XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 4 June 2012
© NXP B.V. 2012. All rights reserved.
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