PMD3001D Datasheet, PDF (3/16 Pages) NXP Semiconductors – MOSFET driver

NXP Semiconductors
PMD3001D
MOSFET driver
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage
open base
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_BM
peak base current
-
single pulse;
-
t_p ≤ 1 ms
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
40
V
40
V
1
A
2
A
0.3
A
1
A
330
mW
400
mW
580
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
600
(1)
P_tot
(mW)
(2)
400
(3)
006aaa784
200
PMD3001D_2
Product data sheet
0
−75
−25
25
75
(1) Ceramic PCB, Al₂O₃, standard footprint
(2) FR4 PCB, mounting pad for collector 1cm²
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
T_amb (°C)
Rev. 02 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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