PMBS3904 Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN general purpose transistor

NXP Semiconductors
NPN general purpose transistor
Product data sheet
PMBS3904
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
I_CBO
I_EBO
h_FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
V_CEsat
V_BEsat
C_c
C_e
f_T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
MIN.
I_E = 0; V_CB = 30 V
−
I_C = 0; V_EB = 5 V
−
V_CE = 1 V; note 1; (see Fig.2)
I_C = 0.1 mA
40
I_C = 1 mA
70
I_C = 10 mA
100
I_C = 50 mA
60
I_C = 100 mA
30
I_C = 10 mA; I_B = 1 mA
−
I_C = 50 mA; I_B = 5 mA
−
I_C = 10 mA; I_B = 1 mA
650
I_C = 50 mA; I_B = 5 mA
−
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
I_C = 10 mA; V_CE = 20 V; f = 100 MHz 180
I_C = 100 µA; V_CE = 5 V; R_S = 1 kΩ; −
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 10 mA; I_Bon = 1 mA;
−
I_Boff = − 1 mA; V_CC = 3 V;
−
V_BB = −1.9 V
−
−
−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
50
50
UNIT
nA
nA
−
−
300
−
−
200
mV
300
mV
850
mV
950
mV
4
pF
12
pF
−
MHz
5
dB
110
ns
50
ns
60
ns
1200 ns
1000 ns
200
ns
2004 Feb 02
3