PMBD354 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Schottky barrier double diode

NXP Semiconductors
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
ΔC_d
capacitance matching
Note
1. Pulse test: t_p = 300 μs; δ = 0.02.
CONDITIONS
see Fig.2
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
V_R = 3 V; note 1; see Fig.3
f = 1 MHz; V_R = 0; see Fig.4
f = 1 MHz; V_R = 0
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 standard mounting conditions.
CONDITIONS
Product data sheet
PMBD354
MAX.
UNIT
350
mV
450
mV
600
mV
0.25
μA
1
pF
0.1
pF
VALUE
500
UNIT
K/W
2003 Mar 25
3