PBSS5350S Datasheet, PDF (3/8 Pages) NXP Semiconductors – High power dissipation (830 mW)

Philips Semiconductors
50 V low V_CEsat PNP transistor
Product specification
PBSS5350S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
150
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
R_CEsat
V_BEsat
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
V_CB = −50 V; I_E = 0
V_CB = −50 V; I_E = 0; T_j = 150 °C
V_EB = −5 V; I_C = 0
V_CE = −2 V; I_C = −500 mA
V_CE = −2 V; I_C = −1 A; note 1
V_CE = −2 V; I_C = −2 A; note 1
I_C = −500 mA; I_B = −50 mA
I_C = −1 A; I_B = −50 mA
I_C = −2 A; I_B = −200 mA; note 1
I_C = −2 A; I_B = −200 mA; note 1
I_C = −2 A; I_B = −200 mA; note 1
V_BE
base-emitter turn-on voltage V_CE = −2 V; I_C = −1 A; note 1
f_T
transition frequency
I_C = −100 mA; V_CE = −5 V; f = 100 MHz
C_c
collector capacitance
V_CB = −10 V; I_E = I_e = 0; f = 1 MHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
−
200
200
100
−
−
−
−
−
−
100
−
TYP.
−
−
−
−
−
−
−
−
−
120
−
−
−
−
MAX. UNIT
−100 nA
−50 µA
−100 nA
−
−
−
−100 mV
−180 mV
−300 mV
<150 mΩ
−1.2 V
−1.1 V
−
MHz
40
pF
2001 Nov 19
3