PBSS4350T Datasheet, PDF (3/10 Pages) NXP Semiconductors – 50 V; 3 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
50 V; 3 A NPN low V_CEsat (BISS) transistor
Product data sheet
PBSS4350T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CRP
I_CM
I_B
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
total power dissipation
T_stg
T_j
T_amb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
note 1
single peak
T_amb ≤ 25 °C; note 2
T_amb ≤ 25 °C; note 3
T_amb ≤ 25 °C; note 4
T_amb ≤ 25 °C; notes 1 and 2
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
50
5
2
3
5
0.5
300
480
540
1.2
+150
150
+150
UNIT
V
V
V
A
A
A
A
mW
mW
mW
W
°C
°C
°C
Notes
1. Operated under pulsed conditions: pulse width t_p ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm².
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
in free air; note 2
in free air; note 3
in free air; notes 1 and 4
VALUE
417
260
230
104
UNIT
K/W
K/W
K/W
K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm².
4. Operated under pulsed conditions: pulse width t_p ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Jan 09
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