PBSS4032ND Datasheet, PDF (3/14 Pages) NXP Semiconductors – 30 V, 3.5 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4032ND
30 V, 3.5 A NPN low V_CEsat (BISS) transistor
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max
Unit
480
mW
750
mW
1
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
1200
P_tot
(1)
(mW)
800
(2)
(3)
400
006aab931
0
−75
−25
25
75
(1) Ceramic PCB, Al₂O₃, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm²
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
T_amb (°C)
PBSS4032ND_1
Product data sheet
Rev. 01 — 30 January 2010
© NXP B.V. 2010. All rights reserved.
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