PBLS6022D Datasheet, PDF (3/16 Pages) NXP Semiconductors – 60 V, 1.5 A PNP BISS loadswitch

NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
TR1; PNP low V_CEsat transistor
V_CBO
collector-base voltage open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_B
base current
-
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
TR2; NPN resistor-equipped transistor
V_CBO
collector-base voltage open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
V_I
input voltage
positive
-
negative
-
I_O
output current
I_CM
peak collector current
single pulse;
t_p ≤ 1 ms
P_tot
total power dissipation T_amb ≤ 25 °C
-
-
[1][2] _-
[3]
Max Unit
−60
V
−60
V
−5
V
−1.5 A
−3
A
−300 mA
−1
A
370
mW
480
mW
630
mW
50
V
50
V
10
V
+30
V
−10
V
100
mA
100
mA
200
mW
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
T_j
T_amb
T_stg
junction temperature
ambient temperature
storage temperature
[1] _-
[2] _-
[3] _-
-
−55
−65
480
mW
590
mW
760
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
PBLS6022D_1
Product data sheet
Rev. 01 — 13 August 2009
© NXP B.V. 2009. All rights reserved.
3 of 16