PBLS4001Y Datasheet, PDF (3/11 Pages) NXP Semiconductors – 40 V PNP BISS loadswitch

NXP Semiconductors
PBLS4001Y; PBLS4001V
40 V PNP BISS loadswitch
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
TR1; PNP low V_CEsat transistor
V_CBO
collector-base voltage open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse; t_p ≤ 1 ms
-
I_B
base current
-
I_BM
peak base current
single pulse; t_p ≤ 1 ms
-
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
TR2; NPN resistor-equipped transistor
V_CBO
collector-base voltage open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
V_I
input voltage
positive
-
negative
-
I_O
output current
I_CM
peak collector current
P_tot
total power dissipation
Per device
-
single pulse; t_p ≤ 1 ms
-
T_amb ≤ 25 °C
[1] _-
−40
V
−40
V
−6
V
−500 mA
−1
A
−50
mA
−100 mA
200
mW
50
V
50
V
10
V
+12
V
−10
V
100
mA
100
mA
200
mW
P_tot
T_j
T_amb
T_stg
total power dissipation
junction temperature
ambient temperature
storage temperature
-
300
mW
-
150
°C
−65
+150 °C
−65
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per device
R_th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Conditions
in free air
Min Typ Max Unit
[1] _-
-
416 K/W
[1][2] _-
-
416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PBLS4001Y_PBLS4001V_3
Product data sheet
Rev. 03 — 12 February 2009
© NXP B.V. 2009. All rights reserved.
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