PBLS2003S Datasheet, PDF (3/16 Pages) NXP Semiconductors – 20 V PNP BISS loadswitch

NXP Semiconductors
PBLS2003S
20 V PNP BISS loadswitch
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
TR1; PNP low V_CEsat (BISS) transistor
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage
open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_B
base current
-
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
TR2; NPN resistor-equipped transistor
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage
open base
-
V_EBO
emitter-base voltage
open collector
-
V_I
input voltage
positive
-
negative
-
I_O
output current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
−20
V
−20
V
−5
V
−3
A
−5
A
−0.5 A
−1
A
0.55 W
0.87 W
1.43 W
50
V
50
V
10
V
+40
V
−10
V
100
mA
100
mA
0.2
W
0.7
W
1.0
W
1.5
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
PBLS2003S_2
Product data sheet
Rev. 02 — 24 August 2009
© NXP B.V. 2009. All rights reserved.
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