PBHV8540T_09 Datasheet, PDF (3/12 Pages) NXP Semiconductors – 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low V_CEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_CESM
collector-emitter peak
V_BE = 0 V
-
voltage
V_EBO
I_C
I_CM
I_BM
P_tot
T_j
T_amb
T_stg
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
open collector
single pulse;
t_p ≤ 1 ms
single pulse;
t_p ≤ 1 ms
T_amb ≤ 25 °C
-
-
-
-
[1] _-
-
−55
−65
Max Unit
500
V
400
V
500
V
6
V
0.5
A
1
A
200
mA
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P_tot
(mW)
300
006aab150
200
100
0
−75
−25
25
FR4 PCB, standard footprint
Fig 1. Power derating curve
75
125
175
T_amb (°C)
PBHV8540T_2
Product data sheet
Rev. 02 — 14 January 2009
© NXP B.V. 2009. All rights reserved.
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