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MPSA92 Datasheet, PDF (3/6 Pages) Motorola, Inc – High Voltage Transistors | |||
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NXP Semiconductors
PNP high-voltage transistor
Product data sheet
MPSA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
IE = 0; VCB = â200 V
IC = 0; VBE = â3 V
VCE = â10 V; note 1
IC = â1 mA
IC = â10 mA
IC = â30 mA
IC = â20 mA; IB = â2 mA; note 1
IC = â20 mA; IB = â2 mA; note 1
IE =ie = 0; VCB = â20 V; f = 1 MHz
IC = â10 mA; VCE = â20 V;
f = 100 MHz
Note
1. Pulse test: tp ⤠300 µs; δ ⤠0.02.
VALUE
200
UNIT
K/W
MIN.
â
â
MAX.
â250
â100
UNIT
nA
nA
25
â
40
â
25
â
â
â500 mV
â
â900 mV
â
6
pF
50
â
MHz
2004 Aug 20
3
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