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IP5306CX8 Datasheet, PDF (3/15 Pages) NXP Semiconductors – Integrated differential microphone filter with ESD protection to IEC 61000-4-2 level 4
NXP Semiconductors
4. Functional diagram
IP5306CX8
Integrated differential microphone filter with ESD protection
A3 A2
Rpu
2 kΩ
Sub
Sub
Rs
Rs(ch)
B1
B3
25 Ω
2.2 kΩ
C1 0.8 nF
C2 1.5 nF
Sub
Rs(ch)
C1
C3
2.2 kΩ
Sub
C1
0.8
nF
Rpd
1 kΩ
C2
1.5 Sub
nF
B2 C2
Fig 2. Schematic diagram IP5306CX8
008aaa194
5. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VI
VESD
Parameter
input voltage
electrostatic discharge
voltage
Conditions
Min Max Unit
−0.5 +4.5 V
pins B1 and C1 to ground
contact discharge
[1] −15 +15 kV
air discharge
[1] −15 +15 kV
IEC 61000-4-2 level 4;
pins B1 and C1 to ground
contact discharge
−8
+8
kV
air discharge
−15 +15 kV
Pch
Ptot
Tstg
Treflow(peak)
Tamb
channel power dissipation
total power dissipation
storage temperature
peak reflow temperature
ambient temperature
IEC 61000-4-2 level 1;
pins A2, A3, B3 and C3
to ground
contact discharge
air discharge
continuous power
continuous power
10 s maximum
−2
+2
kV
−2
+2
kV
-
30
mW
-
60
mW
−55 +150 °C
-
260 °C
−35 +85 °C
[1] Device is qualified with 1000 pulses of ±15 kV contact discharges each, according to the IEC61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
IP5306CX8_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 12 February 2010
© NXP B.V. 2010. All rights reserved.
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