IP4365CX11 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Integrated (U)SIM card passive filter array and USB full speed ESD protection to IEC 61000-4-2 level 4

NXP Semiconductors
4. Functional diagram
IP4365CX11
Integrated SIM card passive filter array and USB ESD protection
IEC61000-4-2
level 1
protection pins
A1
B1
C1
R1
100 Ω
R2
47 Ω
R3
100 Ω
IEC61000-4-2
level 4
protection pins
A3
B3
C3
D1 D2 D3
Fig 2. Schematic diagram
A2, C2
008aaa216
5. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
V_I
input voltage
−0.5 +5.5 V
V_ESD
electrostatic discharge
voltage
pins A3, B3, C3, D1, D2 and D3
to ground (A2, C2)
contact discharge
[1] _{−15 +15 kV}
air discharge
[1] _{−15 +15 kV}
IEC 61000-4-2 level 4; pins A3,
B3, C3, D1, D2 and D3 to
ground (A2, C2)
contact discharge
−8 +8 kV
air discharge
−15 +15 kV
IEC 61000-4-2 level 1; pins A1,
B1 and C1 to ground (A2, C2)
contact discharge
air discharge
P_ch
P_tot
T_stg
T_reflow(peak)
T_amb
channel power dissipation
total power dissipation
storage temperature
peak reflow temperature
ambient temperature
continuous power; T_amb = 70 °C
continuous power; T_amb = 70 °C
10 s maximum
−2 +2 kV
−2 +2 kV
-
60 mW
-
180 mW
−55 +150 °C
-
260 °C
−35 +85 °C
[1] Device is qualified with 1000 pulses of ±15 kV contact discharges each, according to the IEC61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
IP4365CX11_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 26 March 2010
© NXP B.V. 2010. All rights reserved.
3 of 12