IP4282CZ6 Datasheet, PDF (3/9 Pages) NXP Semiconductors – ESD protection for high-speed interfaces

NXP Semiconductors
IP4282CZ6
ESD protection for high-speed interfaces
Table 4.
Symbol
R_dyn
Characteristics …continued
Parameter
dynamic resistance
V_{CL(ch)trt(pos)} positive transient channel clamping
voltage
Conditions
I = 1 A; T_amb = 25 °C;
IEC 61000-4-5/9
positive transient
negative transient
V_esd = 8 kV HBM; T_amb = 25 °C
[1] This parameter is guaranteed by design.
[2] Human Body Model according to JESD22-A-J114D.
Min Typ Max Unit
-
2.4 -
Ω
-
1.3 -
Ω
[2] _-
8
-
V
IP4282CZ6_1
Product data sheet
Rev. 01 — 30 March 2009
© NXP B.V. 2009. All rights reserved.
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