BYC8DX-600 Datasheet, PDF (3/11 Pages) NXP Semiconductors – Hyperfast power diode Isolated plastic package

NXP Semiconductors
BYC8DX-600
Hyperfast power diode
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
T_stg
T_j
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
DC
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
square-wave pulse; δ = 0.5 ;
T_h = 47 °C; see Figure 1; see Figure 2
square-wave pulse; δ = 0.5 ; t_p = 25 µs;
T_h = 47 °C
t_p = 10 ms; sine-wave pulse;
T_j(init) = 25 °C
t_p = 8.3 ms; sine-wave pulse;
T_j(init) = 25 °C
junction temperature
Min Max Unit
-
600 V
-
600 V
-
600 V
-
8
A
-
16 A
-
55 A
-
60 A
-40 150 °C
-
150 °C
20
P_tot
(W)
16
12
8
4
0
0
003aab471
a = 1.57
1.9
2.2
2.8
4.0
2
4
6
8
I_F(AV) (A)
30
P_tot
(W)
25
20
15
10
5
0
0
0.2
0.1
003aab472
δ =1
0.5
4
8
12
I_F(AV) (A)
Fig 1. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYC8DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
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