BUK9Y09-40B Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9Y09-40B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 5 V; see Figure 1;
see Figure 4
-
-
-
-
-15 -
-
-
40 V
40 V
15 V
75 A
T_mb = 100 °C; V_GS = 5 V; see Figure 1
-
-
53 A
I_DM
peak drain current
T_mb = 25 °C; t_p ≤ 10 µs; pulsed;
see Figure 4
-
-
300 A
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
-
-
-55 -
-55 -
105.3 W
175 °C
175 °C
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
-
-
75 A
-
-
300 A
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 75 A; V_sup ≤ 40 V; R_GS = 50 Ω;
V_GS = 5 V; T_j(init) = 25 °C; unclamped
-
-
146 mJ
E_DS(AL)R
repetitive drain-source see Figure 3
avalanche energy
[1][2][3] _-
-
-
J
[4]
[1] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[4] Refer to application note AN10273 for further information.
BUK9Y09-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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