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BUK765R2-40B Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
-
VDGR
drain-gate voltage
RGS = 20 kΩ
-
VGS
gate-source voltage
-20
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; [1] -
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; [2] -
Tmb = 100 °C; VGS = 10 V; see Figure 1;
[2] -
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
-
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
-
Tstg
storage temperature
-55
Tj
junction temperature
-55
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C;
Tmb = 25 °C;
tp ≤ 10 µs; pulsed; Tmb = 25 °C
[1] -
[2] -
-
EDS(AL)S non-repetitive
ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V;
-
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40
V
40
V
20
V
143 A
75
A
75
A
573 A
203 W
175 °C
175 °C
143 A
75
A
573 A
494 mJ
BUK765R2-40B_2
Product data sheet
Rev. 02 — 16 January 2009
© NXP B.V. 2009. All rights reserved.
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