BUK7615-100A Datasheet, PDF (3/7 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7615-100A
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
110
100
Normalised Current Derating
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 5 V
1000
ID/A
100
RDS(ON) = VDS/ID
10
DC
tp =
1uS
100uS
1mS
10mS
100mS
1
1
10 _VDS/V
100
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
1
D=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
Zth / (K/W)
P_D
tp
D
=
tp
T
T
t
0.001
0.00001
0.001 _t/S 0.1
10
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
300
ID/A
250
200
VGS\V =
20.0 10.0 9.0
8.0
7.5
7.0
150
6.5
100
6.0
50
5.5
5.0
4.5
0
0
2
4 _VDS/V 6
8
10
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON)/mOhm
20
19
18
17
VGS/V =
16
15
14
5.5
6.0
13
6.5
7.0
8.0
12
10.0
11
0
20
40 _ID/A 60
80
100
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
January 1999
3
Rev 1.000