BTA312-800ET_10 Datasheet, PDF (3/14 Pages) NXP Semiconductors – 3Q Hi-Com Triac Triggering in three quadrants only

NXP Semiconductors
BTA312-800ET
3Q Hi-Com Triac
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DRM
I_T(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; T_mb ≤ 126 °C; see Figure 3;
see Figure 1; see Figure 2
I_TSM
non-repetitive peak on-state
full sine wave; T_j(init) = 25 °C; t_p = 20 ms;
current
see Figure 4; see Figure 5
I²t
dI_T/dt
I_GM
P_GM
P_G(AV)
T_stg
T_j
I²t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
full sine wave; T_j(init) = 25 °C; t_p = 16.7 ms
t_p = 10 ms; sine-wave pulse
I_T = 20 A; I_G = 0.2 A; dI_G/dt = 0.2 A/µs
over any 20 ms period
Min Max Unit
-
800 V
-
12 A
-
95 A
-
105 A
-
45
A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
150 °C
15
I_T(RMS)
(A)
10
003aab688
5
0
-50
0
50
100
150
T_mb (°C)
50
I_T(RMS)
(A)
40
30
20
10
0
10^−2
10^−1
003aaf738
1
10
surge duration (s)
Fig 1. RMS on-state current as a function of mounting Fig 2. RMS on-state current as a function of surge
base temperature; maximum values
duration; maximum values
BTA312-800ET
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 December 2010
© NXP B.V. 2010. All rights reserved.
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