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| BTA204S-800E Datasheet, PDF (3/14 Pages) NXP Semiconductors – 3Q Hi-Com Triac | |||
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NXP Semiconductors
BTA204S-800E
3Q Hi-Com Triac
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
IT(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; Tmb ⤠107 °C; see Figure 1;
see Figure 2; see Figure 3
ITSM
non-repetitive peak on-state
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
current
see Figure 4; see Figure 5
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; sine-wave pulse
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
over any 20 ms period
Min Max Unit
-
800 V
-
4
A
-
25 A
-
27 A
-
3.1 A2s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
5
IT(RMS)
(A)
4
003aad615
107 °C
3
2
1
0
-50
0
50
100
150
Tmb (°C)
12
IT(RMS )
(A)
10
8
6
4
2
010-2
10-1
003aag083
1
10
s urge duration (s)
Fig 1. RMS on-state current as a function of mounting Fig 2. RMS on-state current as a function of surge
base temperature; maximum values
duration; maximum values
BTA204S-800E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 â 10 May 2011
© NXP B.V. 2011. All rights reserved.
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