BLF6G22LS-75_10 Datasheet, PDF (3/11 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF6G22LS-75
Power LDMOS transistor
6. Characteristics
Table 6. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
V_(BR)DSS drain-source breakdown
voltage
V_GS(th)
V_GSq
I_DSS
I_DSX
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
I_GSS
g_fs
R_DS(on)
C_rs
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V_GS = 0 V; I_D = 0.5 mA
V_DS = 10 V; I_D = 100 mA
V_DS = 28 V; I_D = 690 mA
V_GS = 0 V; V_DS = 28 V
V_GS = V_GS(th) + 3.75 V;
V_DS = 10 V
V_GS = 11 V; V_DS = 0 V
V_DS = 10 V; I_D = 5 A
V_GS = V_GS(th) + 3.75 V;
I_D = 3.5 A
V_GS = 0 V; V_DS = 28 V;
f = 1 MHz
Min
65
1.4
1.75
-
14.9
-
-
-
-
Typ
-
2
2.16
-
18.7
-
7.3
0.14
1.5
Max
-
2.4
2.75
3
-
300
-
0.24
-
Unit
V
V
V
μA
A
nA
S
Ω
pF
7. Application information
Table 7. Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f₁ = 2112.5 MHz; f₂ = 2122.5 MHz; f₃ = 2157.5 MHz; f₄ = 2167.5 MHz;
RF performance at V_DS = 28 V; I_Dq = 690 mA; T_case = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
G_p
IRL
η_D
IMD3
ACPR
power gain
input return loss
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
P_L(AV) = 17 W
P_L(AV) = 17 W
P_L(AV) = 17 W
P_L(AV) = 17 W
P_L(AV) = 17 W
17.6 18.7 -
dB
-
−9.5 −6.5 dB
28 30.5 -
%
-
−37.5 −34 dBc
-
−41.5 −38.5 dBc
7.1 Ruggedness in class-AB operation
The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V_DS = 28 V;
I_Dq = 690 mA; P_L = 75 W (CW); f = 2170 MHz.
BLF6G22LS-75_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
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