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BFR94A_10 Datasheet, PDF (3/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor
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NXP Semiconductors
BFR94A
NPN 5 GHz wideband transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to Tsp ≤ 95 °C
solder point
[1] Tsp is the temperature at the solder point of the collector pin.
7. Characteristics
Typ
[1] 260
Unit
K/W
Table 7.
Symbol
ICBO
hFE
Cc
Characteristics
Parameter
collector-base cut-off current
DC current gain
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
unilateral power gain
NF
noise figure
VO
IMD2
output voltage
second-order intermodulation
distortion
Conditions
Min
IE = 0 A; VCB = 10 V
-
IC = 15 mA; VCE = 10 V; see Figure 3
65
IE = ie = 0 A; VCB = 10 V; f = 1 MHz:
-
see Figure 4
IC = ic = 0 A; VEB = 10 V; f = 1 MHz
-
IC = ic = 0 mA; VCE = 10 V; f = 1 MHz
-
IC = 15 mA; VCE = 10 V; f = 500 MHz;
-
see Figure 5
IC = 15 mA; VCE = 10 V; Tamb = 25 °C [1]
f = 1 GHz
-
f = 2 GHz
-
IC = 5 mA; VCE = 10 V; ΓS = Γopt;
Tamb = 25 °C;
see Figure 12 and Figure 13
f = 1 GHz
-
f = 2 GHz
-
[2][3] -
see Figure 15
[2][4] -
[1] GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10
log
------------------------S---2--1----2-----------------------
(1 – S11 2 )(1 – S22 2 )
dB.
[2] Measured on the same crystal in a SOT37 package (BFR90A).
[3] IMD = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C;
Vp = VO at IMD = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB at fq = 803.25 MHz;
Vr = VO −6 dB at fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz
[4] IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C;
Vp = 60 mV at fp = 250 MHz;
Vq = 60 mV at fp = 560 MHz;
measured at fp + fq = 810 MHz
Typ Max Unit
-
50 nA
90
135
0.6 -
pF
1.2 -
0.35 -
5
-
pF
pF
GHz
14
-
dB
8
-
dB
2.1 -
dB
3
-
dB
150 -
mV
−50 -
dB
BFR94A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 November 2010
© NXP B.V. 2010. All rights reserved.
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