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BFQ149 Datasheet, PDF (3/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor
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NXP Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFQ149
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 135 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
GUM
maximum unilateral power gain
(note 1)
F
noise figure
CONDITIONS
IE = 0; VCB = −10 V;
IC = −70 mA; VCE = −10 V
IC = −70 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
IE = 0; VCB = −10 V; f = 1 MHz
IC = 0; VEB = −0.5 V; f = 1 MHz
IC = 0; VCE = −10 V; f = 1 MHz
IC = −50 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
IC = −50 mA; VCE = −10 V;
Rs = 60 Ω; f = 500 MHz;
Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
THERMAL RESISTANCE
40 K/W
MIN. TYP. MAX. UNIT
− − 100 nA
20 50 −
45−
GHz
−2−
pF
−4−
pF
− 1.7 −
pF
− 12 −
dB
− 3.75 −
dB
Rev. 03 - 28 September 2007
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